? semiconductor components industries, llc, 2007 march, 2007 ? rev. 3 1 publication order number: bc490/d bc490 high current transistors pnp silicon features ? this is a pb?free device* maximum ratings rating symbol value unit collector ? emitter voltage v ceo ?80 vdc collector ? base voltage v cbo ?80 vdc emitter ? base voltage v ebo ?4.0 vdc collector current ? continuous i c ?1.0 adc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 w mw/ c operating and storage junction temperature range t j , t stg ?55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction?to?ambient r ja 200 c/w thermal resistance, junction?to?case r jc 83.3 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ordering information collector 1 2 base 3 emitter http://onsemi.com bc490g to?92 (pb?free) 5000 units / bulk 1 2 3 straight lead bulk pack to?92 case 29 style 17 marking diagram bc 490 ayww a = assembly location y = year ww = work week = pb?free package (note: microdot may be in either location)
bc490 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (note 1) (i c = ?10 madc, i b = 0) v (br)ceo ?80 ? ? vdc collector ?base breakdown voltage (i c = ?100 adc, i e = 0) v (br)cbo ?80 ? ? vdc emitter ?base breakdown voltage (i e = ?10 adc, i c = 0) v (br)ebo ?4.0 ? ? vdc collector cutoff current (v cb = ?60 vdc, i e = 0) i cbo ? ? ?100 nadc on characteristics dc current gain (i c = ?10 madc, v ce = ?2.0 vdc) (i c = ?100 madc, v ce = ?2.0 vdc) (i c = ?1.0 adc, v ce = ?5.0 vdc) h fe 40 60 15 ? ? ? ? 400 ? ? collector ?emitter saturation voltage (i c = ?500 madc, i b = ?50 madc) (i c = ?1.0 adc, i b = ?100 madc) v ce(sat) ? ? ?0.25 ?0.5 ?0.5 ? vdc base ?emitter saturation voltage (i c = ?500 madc, i b = ?50 madc) (i c = ?1.0 adc, i b = ?100 madc) v be(sat) ? ? ?0.9 ?1.0 ?1.2 ? vdc dynamic characteristics current?gain ? bandwidth product (i c = ?50 madc, v ce = ?2.0 vdc, f = 100 mhz) f t ? 150 ? mhz output capacitance (v cb = ?10 vdc, i e = 0, f = 1.0 mhz) c ob ? 9.0 ? pf input capacitance (v eb = ?0.5 vdc, i c = 0, f = 1.0 mhz) c ib ? 110 ? pf 1. pulse test: pulse width = 300 s, duty cycle 2%. figure 1. switching time test circuits *total shunt capacitance of test jig and connectors for pnp test circuits, reverse all voltage polarities 5.0 s +10 v 0 v in 5.0 f 100 100 turn?on time ?1.0 v v cc +40 v r l output *c s < 6.0 pf t r = 3.0 ns 5.0 s v in 5.0 f 100 100 turn?off time +v bb v cc +40 v r l output *c s < 6.0 pf t r = 3.0 ns r b r b
bc490 http://onsemi.com 3 figure 2. current?gain ? bandwidth product i c , collector current (ma) ?200 ?70 ?50 ?30 ?20 ?10 ?7.0 ?5.0 ?3.0 ?2.0 200 100 70 50 20 v ce = ?2.0 v t j = 25 c f, current?gain bandwidth product (mhz) t c, capacitance (pf) t, time (ns) figure 3. capacitance v r , reverse voltage (volts) ?100 ?50 ?20 ?10 ?5.0 ?2.0 ?1.0 ?0.5 ?0.2 ?0.1 100 70 50 30 20 5.0 t j = 25 c c obo c ibo 10 figure 4. switching time i c , collector current (ma) ?500 ?50 ?30 ?20 ?10 ?7.0 ?5.0 1.0 k v cc = ?40 v i c /i b = 10 i b1 = i b2 t j = 25 c 700 500 300 200 100 70 50 30 20 10 t s t f t r t d @ v be(off) = ?0.5 v ?100 7.0 ?200 ?100 ?70 ?300 30 figure 5. thermal response t, time (ms) 1.0 r(t) transient thermal resistance (normalized) 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100 d = 0.5 0.2 0.1 0.02 0.01 single pulse duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 (see an?469) t j(pk) ? t c = p (pk) z jc(t) t j(pk) ? t a = p (pk) z ja(t) t 1 t 2 p (pk) z jc(t) = r(t) ? r jc z ja(t) = r(t) ? r ja single pulse
bc490 http://onsemi.com 4 v ce , collector?emitter voltage (volts) ?1.0 k ?1.0 i c , collector current (ma) ?2.0 ?5.0 figure 6. active region, safe operating area current limit thermal limit second breakdown limit ?700 ?500 ?300 ?200 ?100 ?70 ?50 ?30 ?20 ?10 ?3.0 ?10 ?20 ?50 ?30 ?7.0 ?70 ?100 bc490 100 s 1.0 ms 1.0 s t c = 25 c t a = 25 c i c , collector current (ma) figure 7. ?on? voltages v, voltage (volts) 1.0 0.8 0.6 0.4 0.2 0 0.5 1.0 200 20 t j = 25 c v be(on) @ v ce = 1.0 v v ce(sat) @ i c /i b = 10 5.0 10 50 100 v be(sat) @ i c /i b = 10 2.0 500 i c , collector current (ma) figure 8. collector saturation region v ce , collector?emitter voltage (volts) 1.0 0.8 0.6 0.4 0.2 0 0.1 10 1.0 t j = 25 c i c = 10 ma 0.05 0.2 0.5 2.0 5.0 20 100 ma 250 ma 50 ma 50 500 ma i c , collector current (ma) figure 9. base?emitter temperature coefficient ?0.8 ?2.8 1.0 100 10 r vb for v be 0.5 2.0 5.0 20 50 200 ?1.2 ?1.6 ?2.0 ?2.4 r vb , temperature coefficient (mv/ c) 500 figure 10. dc current gain i c , collector current (ma) 400 ?0.5 ?0.7 ?1.0 ?2.0 ?3.0 ?5.0 ?7.0 ?10 ?20 ?30 ?50 ?70 ?100 ?200 200 100 80 60 40 h fe , dc current gain t j = 125 c 25 c ?55 c v ce = ?1.0 v ?300 ?500
bc490 http://onsemi.com 5 i c , collector current (ma) figure 11. ?on? voltages v, voltage (volts) ?1.0 ?0.8 ?0.6 ?0.4 ?0.2 0 t j = 25 c v be(on) @ v ce = ?1.0 v v ce(sat) @ i c /i b = 10 ?0.5 v be(sat) @ i c /i b = 10 ?1.0 ?2.0 ?5.0 ?10 ?20 ?50 ?100 ?200 ?500 i b , base current (ma) figure 12. collector saturation region v ce , collector?emitter voltage (volts) ?1.0 ?0.8 ?0.6 ?0.4 ?0.2 0 ?0.1 ?10 ?1.0 t j = 25 c i c = ?10 ma ?0.05 ?0.2 ?0.5 ?2.0 ?5.0 ?20 ?50 ?100 ma ?250 ma ?500 ma i c , collector current (ma) figure 13. base?emitter temperature coefficient ?0.8 ?2.8 ?1.0 ?100 ?10 r vb for v be ?0.5 ?2.0 ?5.0 ?20 ?50 ?200 ?1.2 ?1.6 ?2.0 ?2.4 r vb , temperature coefficient (mv/ c) ?500 ?50 ma
bc490 http://onsemi.com 6 package dimensions to?92 (to?226) case 29?11 issue am notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 ??? 12.70 ??? l 0.250 ??? 6.35 ??? n 0.080 0.105 2.04 2.66 p ??? 0.100 ??? 2.54 r 0.115 ??? 2.93 ??? v 0.135 ??? 3.43 ??? 1 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j b k g section x?x c v d n xx seating plane dim min max millimeters a 4.45 5.20 b 4.32 5.33 c 3.18 4.19 d 0.40 0.54 g 2.40 2.80 j 0.39 0.50 k 12.70 ??? n 2.04 2.66 p 1.50 4.00 r 2.93 ??? v 3.43 ??? 1 t straight lead bulk pack bent lead tape & reel ammo pack style 17: pin 1. collector 2. base 3. emitter on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5773?3850 bc490/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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